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880nM 2 PINS 3DU5C IGBT Transistor , NPN Silicon Phototransistor With Metal Encapsulated

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880nM 2 PINS 3DU5C IGBT Transistor , NPN Silicon Phototransistor With Metal Encapsulated

Name: 880nM 2 PINS 3DU5C IGBT Transistor NPN Silicon Phototransistor With Metal Encapsulated
Brand: VISHAY
Price: 1 USD

Brand Name : VISHAY

Model Number : 3DU5C

Certification : ROHS

Place of Origin : Original Factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union，Paypal

Supply Ability : 100000pcs

Delivery Time : 1-3Days

Packaging Details : BOX

Series : 3DU5C NPN Silicon Phototransistor

Application : Signal Receiver and Emitter

Package : Through hole 2 pins

Model : 3DU5C

Working Voltage(Max.) : 10V

Peak Wavelength : 880nM

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880nM 2 PINS 3DU5C NPN Silicon Phototransistor with Metal Encapsulated

Features :

 NPN Silicon Phototransistor;

 Model : 3DU5C
 Working Voltage(Max.) : 10V;
 Reverse Breakdown Voltage : 15V;
 Dark Current : 0.3uA
 Photocurrent : 0.5-1mA;
 Power Consumption : 30mW;
 Peak Wavelength : 880nM
 Body Size : 7 x 5mm/ 0.28" x 0.2"(L*D);
 Total Length : 28mm/ 1.1";
 External Material : Metal

Product Tags:

insulated gate bipolar transistor

high speed switching diode

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